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Electron leakage in Ga As-based separately confined heterostructure 808 nm laser diodes(SCH LDs)has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well(QW), an Al Ga As interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the Al Ga As interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.
Electron leakage in Ga As-based separately-confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons into the quantum well (QW), an Al Ga As interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the Al Ga As interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.