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在半导体微纳加工技术中,纳米压印由于具备低成本、高产出、超高分辨率等诸多优势而备受研究者和半导体厂商的青睐,有望成为下一代光刻技术的重要备选支撑技术之一.然而在其施压流程中,由于气体诱捕或陷入所造成的气泡缺陷问题直接关系到图案复制的成功率和完整性,因此避免气泡缺陷,阻止气泡进入模穴是亟待解决的关键问题.提出一种适用于在气体环境中进行气压压缩式纳米压印工艺并避免气体进入掩膜板基板间隙的方法.采用带有刻蚀一定宽度凸出环的掩膜板,凸出环与基板形成环板毛细缝隙,图形转移介质流体在其中形成毛细液桥,使掩膜板-介质-基板形成独立的封闭腔,转移介质黏附力所产生的静摩擦力及介质流体表面张力所诱导的毛细力抵抗施压气体,有效地阻止气体进入空穴形成气泡缺陷.通过理论解析推导求出针对具有不同表面特性转移介质流体的凸出环有效宽度,为掩膜板制备提供理论依据.
In semiconductor micro / nano processing technology, nanoimprint has been favored by researchers and semiconductor manufacturers due to many advantages such as low cost, high output and super high resolution, and is expected to become an important alternative support for the next generation of lithography However, in the process of pressure application, the problem of bubble defects caused by entrapment or entrapment of gases is directly related to the success rate and integrity of pattern replication. Therefore, avoiding bubble defects and preventing bubbles from entering the cavity is the key to be solved The paper proposes a method suitable for gas compression nano-imprinting in a gas environment and avoiding the gas entering the gap of the substrate of the mask plate. A mask with an etched ring protruding a certain width is used, The substrate forms a capillary gap in the ring plate. The pattern transfer medium fluid forms a capillary bridge therein, so that the mask plate-medium-substrate forms an independent closed chamber. The static friction generated by the adhesion of the transfer medium and the capillary induced by the surface tension of the medium fluid Force against the pressure of gas, effectively prevent the gas bubbles into the hole to form bubble derived by theoretical analysis derived with different surface characteristics of the transfer The effective width of the convex ring of the medium fluid provides a theoretical basis for mask preparation.