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业已用自动化电子束曝光机大批量制作微波晶体管(ML-220),在6千兆赫下最小增益为8分贝,最大噪声系数为5.5分贝。本报告讨论了电子束曝光机制作的高性能的 ML-220晶体管及其工艺过程和成品率。采用大视场电子光学系统和完全自动化图形对准系统,使电子束光刻的实用性增加了。其它的机器性能已有说明,例如(1)校准图形位置、大小、旋转和在±2500埃以内的正交性的计算机控制的图形对准系统;(2)计算机控制的 x—y 工作台能够在7.5×7.5厘米范围内准确地作步进重复;(3)适合于制作微波晶体管的电子抗蚀剂工艺;(4)能刻出0.5微米宽的晶体管发射极条的计算机控制的电子束记录仪。一般说来,在本合同期间研制的电子束技术,能用于需要较高频率性能和较高封装密度的各种固体器件。电子束技术可用于磁泡存储器、电荷耦合器件、表面波器件和场效应晶体管。
The microwave transistor (ML-220) has been mass produced in an automated electron beam lithography machine with a minimum gain of 8 dB at 6 GHz and a maximum noise figure of 5.5 dB. This report discusses the high performance ML-220 transistor made by EBM, its process and yield. The use of a large field of view electronic optical system and a fully automated pattern alignment system have increased the usefulness of electron beam lithography. Other machine capabilities have been described such as (1) a computer-controlled graphical alignment system that calibrates the position, size, rotation, and orthogonality within ± 2500 Angstroms; (2) a computer-controlled x-y stage can (3) An electronic resist process suitable for fabricating a microwave transistor; (4) Computer controlled electron beam recording of a 0.5 micron wide transistor emitter strip instrument. In general, electron beam technology developed during this contract can be used for a variety of solid state devices that require higher frequency performance and higher packing density. Electron beam technology can be used in bubble memories, charge-coupled devices, surface wave devices and field-effect transistors.