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中国“十一五”规划已明确提出：单位国内生产总值能源消耗比“十五”期末要降低20％左右。由于电力是目前中国主要的工业能源,因此,要实现国家的这一宏大生态目标,关键就是要有效降低工业生产过程中那些需要大电流和高电压的应用的功耗,如,交流电机控制、逆变器、UPS电源、电梯或辅助传动设备、机车与列车用电源、以及供暖系统传动装置等工业自动化应用。所有这些交流控制应用都需要一个能够产生大电流和高电压的核心功率器件,目前,市场上的核心功率器件主要有MOSFET半导体场效应晶体管、双极型功率晶体管和绝缘栅双极型功率晶体管IGBT。只有绝缘栅双极型功率晶体管IGBT集MOSFET场效应晶体管的高速性能和双极型功率晶体管的低电阻性能于一体,具有电压型控制、输入阻抗大、驱动功率小、安全工作区大等优点,因此,能否有效地降低IGBT开关元件的功耗也就成为实现中国“十一五”规划能源消耗总目标的关键之一。在即将于上海举行的2007年慕尼黑电子展上,当今最领先的IGBT器件供应商,如,三菱电机、塞米控、富士电机和英飞凌半导体等领先企业将为广大的中国机电产品设计师带来他们开发的最新IGBT产品。例如：三菱电机公司将带来其第五代高性能、小型化、低损耗智能功率模块(IPM)。英飞凌科技公司将带来专为牵引驱动而优化的全新IHM／IHV B系列IGBT功率模块和全新紧凑型PrimePACKTM IGBT模块系列。借助全新IHM／IHV B系列IGBT功率模块,用户可设计出能够在严酷的环境下正常工作,全面满足大负荷与温度循环要求的高效功率变频器。与同等尺寸的传统变频器相比,基于这种全新高功率模块设计的变频器的功率可提高50％。同时,因为IHM/IHV B模块优良的热性能,运用它设计的变频器的输出电流在典型的工况下可以使得输出电流的能力提高50％,英飞凌还将这种模块的最小贮存温度从先前-40℃降低至-55℃。IHM／IHV B系列模块与成熟IHM-A系列产品完全兼容,这能够让用户在不改变产品结构的情况下,进行更新换代。除改进热阻性能外,全新B系列模块还可满足一些要求非常苛刻的应用。英飞凌为IHM/IHV B设计了碳化硅铝(AlSiC)基板,与氮化铝衬底结合使用,可将热循环能力提高10倍。
China’s “Eleventh Five-year Plan” has made it clear that the energy consumption per unit of GDP will have to be reduced by about 20% from the end of the “Tenth Five-Year Plan” period. Since electricity is currently the major industrial energy source in China, the key to achieving this ambitious ecological goal in the country is to effectively reduce the power consumption of those applications that require high currents and voltages in industrial processes, such as AC motor control, Inverter, UPS power supply, elevator or auxiliary transmission equipment, locomotive and train power supply, and heating system transmission and other industrial automation applications. All of these AC control applications require a core power device capable of generating high currents and voltages. Currently, the core power devices on the market are MOSFET semiconductor field effect transistors, bipolar power transistors, and insulated gate bipolar power transistor IGBTs . Only insulated gate bipolar power transistor IGBT MOSFET high-speed performance of field-effect transistor and bipolar power transistor low resistance in one, with the voltage control, input impedance, drive power, safe working area and other advantages, Therefore, it is one of the keys to achieve the overall goal of energy consumption in China’s “Eleventh Five-year Plan” to effectively reduce the power consumption of IGBT switching elements. At the upcoming 2007 Munich Electronics Fair in Shanghai, leading companies such as Mitsubishi Electric, Semikron, Fuji Electric and Infineon Technologies, the leading IGBT device suppliers in the market today, will supply the majority of China’s electromechanical designer band Come to their latest IGBT product development. For example: Mitsubishi Electric Corporation will bring its fifth generation of high-performance, small, low-loss Intelligent Power Module (IPM). Infineon Technologies will bring the new IHM / IHV B Series IGBT Power Modules and the new compact PrimePACKTM IGBT Module Series optimized for traction drive. With the new IHM / IHV B Series IGBT Power Modules, users can design high-efficiency power inverters that will work under harsh conditions and fully meet the demands of heavy duty and temperature cycling. Drives based on this new high-power module offer up to 50% more power than conventional inverters of the same size. At the same time, due to the excellent thermal performance of the IHM / IHV B module, the output current of the inverter designed with it can increase the output current capability by 50% under typical operating conditions. Infineon also defines the module’s minimum storage temperature From the previous -40 ℃ to -55 ℃. The IHM / IHV B-Series modules are fully compatible with mature IHM-A Series products, enabling users to upgrade without changing their product mix. In addition to improving thermal resistance performance, the new B Series modules also meet some of the most demanding applications. Infineon designed the silicon carbide aluminum (AlSiC) substrate for IHM / IHV B and combined it with an aluminum nitride substrate to increase thermal cycling capacity by a factor of 10.