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为了对ＩＣ进行有效的成品率预报及故障分析，硅片表面与光刻有关的缺陷通常被假设为圆形的或方形的，然而，真实缺陷的形貌是多种多样的．本文对真实缺陷轮廓的盒维数及其描述真实缺陷方向的最小尺寸的方向角θｍｉｎ的分布进行了检验．本文得到的结论有助于实现对硅片表面缺陷的精细表征及其计算机模拟
In order to predict the IC’s yield and analyze the failure, lithography-related defects on the wafer surface are usually assumed to be circular or square. However, the real defects are diverse. This paper examines the box dimension of the true defect contour and the distribution of the direction angle θmin of the minimum dimension of the true defect. The conclusions obtained in this paper contribute to the fine characterization of silicon surface defects and their computer simulation