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本征缺陷空穴导电型 ZnS 的发光和光电特性通常 ZnS 是强补偿单一电子导电的半导体.原因在工作[81]中已作过详细分析.因此人们的兴趣是制备和研究空穴导电的晶体样品的制备方法和研究无论是在 ZnS高阻样品上(ρ≈10~(19)欧姆·厘米)还是在低
Intrinsic defects Luminescence and optoelectronic properties of hole-conducting ZnS In general, ZnS is a semiconductor that strongly compensates for single-electron conduction. The reason for this has been analyzed in detail in [81], and it is therefore of interest to prepare and study hole-conducting crystals The preparation method and research of the samples are very good in both ZnS high resistance samples (ρ≈10 ~ (19) ohm · cm)