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本文用熔融KOH化学择优腐蚀,金相显微镜,扫描电镜阴极荧光研究了液相外延生长的Ga_(1-x)AlxAs/GaAs中位错的延伸和分布.观察到异质结Ga_(1-x)AlxAs/GaAs中位铅延伸和密度分布与界面成分值x有关.在一定x值范围内,观察到界面层中存在位错网络,这种位错网络对衬底位错向外延层延伸有抑制作用.在此x值范围内外延层是无位错的.用高压透射电镜观察位错网络的平面和剖面分布特征,并对网络形成机理进行了定性讨论.
In this paper, the extension and distribution of dislocations in Ga 1- (1-x) AlxAs / GaAs grown by liquid phase epitaxy have been studied by chemical selective corrosion of KOH, metallographic microscope and scanning electron microscopy. It is observed that the heterojunction Ga 1-x ) The median lead extension and density distribution of AlxAs / GaAs is related to the interfacial composition value x. Dislocation networks are observed in the interfacial layer over a range of x values, and this dislocation network extends substrate dislocations toward the epitaxial layer with In the range of x value, the epitaxial layer is without dislocation.The plane and section distribution of dislocation network is observed by high-pressure transmission electron microscope, and the formation mechanism of network is discussed qualitatively.