论文部分内容阅读
根据室温和77K下电学性质测试数据,计算了非掺杂VPEGaAs材料中空间电荷中心密度与散射截面积的乘积N_(SO)A,然后从N_(SO)A分别与N_D及μ_(300K)间的关系,推测空间电荷散射中心是某种Si_G_S-(O_1,V_1)型的络合物.结合本工作,为了在AsCl_3欠纯的情况下获得适当纯度的外延层,在气相外延系统中装入去硫装置,有效地抑制了硫、硒等杂质,附带发现该装置对碳的去除也有一定效果.
According to the test data of electrical properties at room temperature and 77K, the product of N_ (SO) A and N_ (SO) A was calculated from the space charge center density and the scattering cross-sectional area in non-doped VPEGaAs materials. , It is speculated that the space charge scattering center is a complex of Si_G_S- (O_1, V_1) type.With this work, in order to obtain an epitaxial layer of appropriate purity in the case of AsCl_3 under-pure, the vapor phase epitaxy system is loaded with Desulfurization device, effectively inhibit the sulfur, selenium and other impurities, incidentally found that the device also has some effect on the removal of carbon.