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在电子工业发展中,希望不断提高半导体基片上电路元件的数量和性能,要求把更多的电路元件集成在一个只有几平方毫米的基片上。这将要求增加电路图形中线条的分辨率。为此已用X射线和电子束进行了光刻实验。但它们都存在明显的缺点。X射线进行光刻要求使用专用掩模,且这种掩模极易损坏,难以控制;电子束光刻机昂贵(约200万英磅),比一般光刻速度慢,而且须用特殊的抗蚀剂。而激光加工为现代半导体工艺提供了重要手段。现就国外激光技术在掩模光刻等方面应用的研制情况叙述如下。
In the electronics industry, it is hoped that the number and performance of circuit components on semiconductor substrates will continue to increase, requiring more circuit components to be integrated onto a single substrate of only a few square millimeters. This will require increasing the resolution of the lines in the circuit diagram. For this purpose, lithography experiments have been conducted with X-rays and electron beams. But all of them have obvious shortcomings. X-ray lithography requires the use of a dedicated mask, which is extremely fragile and difficult to control. Electron beam lithography is expensive (about 2 million pounds) and is slower than normal lithography and requires special resistance Etching agent. The laser processing for the modern semiconductor technology provides an important means. Now on the foreign laser technology in lithography and other aspects of the development of the application described below.