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用红外吸收光谱、拉曼光谱、反射光谱、椭偏光法等研究了注氮硅的光学性质.注入条件为(1×10~(14)-1×10~(17))N·cm~(-2),70keV.研究结果表明:氮的电激活率很低,这与氮-硅原子间的络合以及残留的注入损伤有关.当注氮剂量≥1×10~(16)N·cm~(-2)时,实验结果表明,形成了无定形 Si_3N_4或硅氮络合物颗粒团.与此相联系,氮经热处理后不易产生外扩散.800℃,1小时退火,损伤也不易消除.注氮剂量约为1×10~6 N·cm~(-12)时,注入层的损伤纵向分布具有如下特征:表面层有一层很薄的紊乱区,之后有一轻损伤区,最后为饱和损伤区.在饱和损伤区与衬底之间存在较陡的边界.
The optical properties of silicon nitride were studied by infrared absorption spectroscopy, Raman spectroscopy, reflectance spectroscopy and ellipsometry.The injection conditions were (1 × 10 ~ (14) -1 × 10 ~ (17)) N · cm ~ ( -2), 70keV. The results show that the activation energy of nitrogen is very low, which is related to the complexation of nitrogen and silicon atoms and the residual implanted damage.When the dose of nitrogen injection is more than 1 × 10 ~ (16) N · cm ~ (-2), the experimental results show that amorphous Si_3N_4 or Si-N complex particles are formed.On the other hand, the nitrogen is hardly diffused outwardly after heat treatment and annealed at 800 ℃ for 1 hour, the damage is not easy to be eliminated When the amount of nitrogen injection is about 1 × 10 ~ 6 N · cm ~ (-12), the damage longitudinal distribution of the implanted layer has the following characteristics: the surface layer has a thin disorder zone, followed by a light damage zone and finally saturated Damage zone. There is a steeper boundary between the saturated damage region and the substrate.