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研究以射频磁控溅射法在Ｓｉ衬底上沉积ＳｉＯ２膜．这一方法避免了高温氧化法对器件性能的损害．在结构和物理性能上对ＳｉＯ２进行了多方面的测试和分析．结果表明，ＳｉＯ２膜具有：１）微晶结构，结构致密、表面均匀、无针孔等．２）优良的物理性能，腐蚀速率（在Ｐ腐蚀液中）０．２０～０．２４ｎｍ／ｓ，击穿场强２．６×１０７～４．４×１０７Ｖ／ｃｍ．可以得出结论：射频磁控溅射法沉积的ＳｉＯ２膜与热氧化法沉积的ＳｉＯ２膜具有相同的物理性质．
The deposition of SiO2 films on Si substrate by RF magnetron sputtering was studied. This method avoids the high temperature oxidation damage to the device performance. In the structure and physical properties of SiO2 for a wide range of testing and analysis. The results show that the SiO2 film has: 1) microcrystalline structure, compact structure, uniform surface, no pinhole and so on. 2) Excellent physical properties, corrosion rate (in P corrosive solution) 0.20 ~ 0.24nm / s, breakdown field strength 2.6 × 107 ~ 4.4 × 107V / cm. It can be concluded that the SiO2 film deposited by RF magnetron sputtering has the same physical properties as the SiO2 film deposited by thermal oxidation.