本文提出空穴注入控制型横向绝缘栅双极晶体管 (CI LIGBT) ,可有效控制高压下阳极区空穴注入 ,提高器件的抗闩锁性能 .数值模拟与实验表明 ,通过对阳极区结深、反偏p+ n+ 结击穿电压和取样电阻的优化 ,可实现其导通压降与抗闩锁性能的折衷 In this paper, CI LIGBT (hole injection controlled lateral insulated gate bipolar transistor) is proposed, which can effectively control the hole injection in the anode region under high voltage and improve the latch-up resistance of the device.Numerical simulation and experiments show that by the junction of the anode region, Reverse bias p + n + junction breakdown voltage and sampling resistance optimization, can achieve its turn-on voltage drop and anti-latch performance trade-off