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GaAs/AlGaAs核-壳结构纳米线是制作金属-半导体-金属(MSM)型高速光电探测器最简洁有效的光电材料之一。采用金属有机化学气相沉积(MOCVD)设备,在GaAs(111)B衬底上开展了GaAs/AlGaAs核-壳结构纳米线的生长研究,用场发射扫描电子显微镜(SEM)和微区光荧光谱仪(PL)对制备的GaAs/AlGaAs核-壳结构纳米线样品进行了测试分析。采用已优化的GaAs/AlGaAs核-壳结构纳米线的生长工艺参数,主要研究了AlGaAs壳材料的生长机制,获得了高质量的AlGaAs壳材料,AlGaAs壳材料生长速率约为50 nm/min,Al的原子数分数为14%。这些结果为将来多异质结构纳米线的生长和光电探测器的制备奠定了基础。
GaAs / AlGaAs core-shell nanowires is one of the simplest and most effective optoelectronic materials for making metal-semiconductor-metal (MSM) high-speed photodetectors. The growth of GaAs / AlGaAs core-shell nanowires was carried out on GaAs (111) B substrate by metal organic chemical vapor deposition (MOCVD). The emission spectra were characterized by field emission scanning electron microscopy PL) prepared GaAs / AlGaAs core-shell nanowire samples were analyzed. The optimized growth process parameters of GaAs / AlGaAs core-shell nanowires were used to study the growth mechanism of AlGaAs shell materials and the high quality AlGaAs shell materials were obtained. The growth rate of AlGaAs shell materials was about 50 nm / min, and the Al The atomic fraction is 14%. These results will lay the foundation for future growth of multi-heterostructure nanowires and photodetector fabrication.