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用高速率升华法制备的ZnSe晶体,研究了C-ZnSe:Al的电致发光。这种新型发光系统可产生黄色自激活发射,峰值波长在5900。阈值电压0.8伏。在2伏4mA下亮度为50fL,在3伏60mA下,最高外量子效率在10~(-4),最大平均结面亮度600fL,讨论指出,发光是由注入空穴在Al和Zn空位组成的联合中心上与电子复合引起。利用这一现象制作了简易的发光管、数码管及发光矩阵。
ZnSe crystals prepared by high rate sublimation method were used to study the electroluminescence of C-ZnSe: Al. The new luminescent system produces a yellow self-activating emission with a peak wavelength of 5900. The threshold voltage is 0.8 volts. The maximum external quantum efficiency is 10 ~ (-4) at 3V and 60mA, and the maximum average surface brightness is 600fL. It is pointed out that the luminescence is caused by the injection of holes in the Al and Zn vacancies Associated with the electronic complex caused by the center. Using this phenomenon made a simple LED, digital tube and light-emitting matrix.