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C波段硅功率晶体管在微波整机和通讯等领域有广泛用途。由于硅双极型晶体管具有比GaAs FET低得多的1/f相位噪声,因此,在一些高质量的振荡器中,急需硅功率晶体管。但是,当工作频率提高到C波段时,晶体管的频率和功率性能发生尖锐的矛盾。晶体管的输出功率、增益和效率随着工作频率的升高而急剧下降。这给器件的研制带来了很多困难,国内长期无法解决。南京电子器件研究所采用T形发射极自对准结构,用φ75mm硅片研制成功C波段硅功率管。晶体管的E-B金属电极横向间距几乎为零。发射极扩散层和基极接触窗口的间距约0.4μm。这种T形电极晶体管(TSET)对光刻工艺精确度的要求不很苛刻。测试结果表明,晶体管在4.2GHz时,连续波输出功率大于3W,增益大于8dB,集电极效率大于40％。晶体管作振荡应用时,在4.3GHz下振荡输出功率可达1W,直流—射频转换效率可达20％,是
C-band silicon power transistors in the microwave machine and communications and other fields have a wide range of uses. Because silicon bipolar transistors have much lower 1 / f phase noise than GaAs FETs, in some high quality oscillators, silicon power transistors are in dire need. However, when the operating frequency is raised to the C band, the frequency and power performance of the transistor sharply contradict each other. Transistor output power, gain and efficiency with the operating frequency of the sharp decline. This has brought a lot of difficulties to the development of the device, which can not be solved for a long time in China. Nanjing Institute of Electronic Devices using T-emitter self-aligned structure, developed with φ75mm silicon C-band silicon power tube. Transistor E-B metal electrode lateral spacing is almost zero. The pitch of the emitter diffusion layer and the base contact window is about 0.4 [mu] m. This T-electrode transistor (TSET) lithography process accuracy is not very demanding. The test results show that the output power of continuous wave is more than 3W, the gain is more than 8dB and the collector efficiency is more than 40% at 4.2GHz. Transistor for oscillation applications, oscillation output power up to 1W at 4.3GHz, DC - RF conversion efficiency of up to 20%, is