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SiGe材料由于禁带带隙较窄和与Si工艺相兼容的优点,被广泛用于高频双极晶体管的制造中。实验把SiGe/Si异质结应用于功率器件方面,制造出了超快速软恢复SiGe/Si异质结功率开关二极管。与同结构的传统Si二极管相比,该功率二极管可以获得更短的反向恢复时间,低的正向压降,低的反向峰值电流,较软的恢复特性。30%Ge含量的SiGe二极管反向恢复时间比同结构的Si二极管缩了短四分之三,软度因子接近于1。这些性能的改进无需采用少子寿命控制技术,因而很容易集成于功率集成电路中。
SiGe materials are widely used in the manufacture of high frequency bipolar transistors because of their narrow band gap and compatibility with Si processes. Experiments to SiGe / Si heterojunction applied to power devices, to create ultra-fast soft-recovery SiGe / Si heterojunction power switching diodes. The power diode can achieve shorter reverse recovery time, lower forward voltage drop, lower reverse peak current and softer recovery characteristics than conventional Si diodes of the same structure. The 30% Ge content of SiGe diode reverse recovery time shorter than the same structure Si diodes short three quarters, the softness factor close to 1. These performance improvements eliminate the need for a low-life-control technology and are therefore easily integrated into power ICs.