本文使用单带双谷理论研究了GaAs/AlGaAs量于阱中的Г-X混和现象.介绍了Г态、X态和能级高于势垒的谐振态的特点.给出了谐振态能级随势阱和势垒层宽变化的关系.阐述了超薄层量子阱和非限定态的一些有趣的特性.在此基础上提出了一个超晶格能带的形成模型并对最新的一些实验结果给出了恰当的解释. In this paper, the single-band double-valley theory is used to investigate the Г-X mixing of GaAs / AlGaAs in a well. The characteristics of the Г-state, the X-state and the energy states above the potential barrier are introduced. With the relationship between potential well and barrier layer width variation, the ultra-thin layer quantum wells and some interesting properties of non-finite state are expounded.On the basis of this, a formation model of superlattice energy band is proposed and some newest experiments The result gives the right explanation.