论文部分内容阅读
对两种衬底材料的 n~+/p/p~+结构的硅太阳电池进行了深能级瞬态谱(DLTS)测量。在二次直拉料衬底的电池中观察到一个空穴陷阱和两个电子陷阱;在半导体级衬底的电池中观察到三个穴陷阱和一个电子陷阱。并给出了各个陷阱的能级位置和俘获截面。对特意挑选出的效率不同的电池测量了各个空穴和电子陷阱浓度,结果表明电池效率与少子(电子)陷阱浓度有较密切的关系。对二次直拉料电池,E_c-0.27eV 陷阱是对效率有害的主要陷阱,分析表明这一陷阱可能是钛杂质所造成的;而对半导体级电池,主要有害的陷阱为能级位于 E_c-0.34eV 的陷阱。
Deep-level transient spectroscopy (DLTS) measurements were performed on n ~ + / p / p ~ + structured silicon solar cells of two substrate materials. One hole trap and two electron traps were observed in the cells of the second straight draw substrate; three hole traps and one electron trap were observed in the cells of the semiconductor substrate. The energy level position and capture cross section of each trap are given. The density of holes and electron traps was measured for the cells of different efficiencies specially selected. The results show that the cell efficiency is closely related to the concentration of the minority (electron) traps. The E_c-0.27eV trap is the main trap that is detrimental to the efficiency of secondary straight pull cells. The analysis shows that this trap may be caused by titanium impurities. For semiconductor-grade batteries, the main detrimental trap is that the energy level is at E_c- 0.34eV trap.