高分辨率红外成像系统需要具有数千个探测器和高性能的甚长扫描列阵。本文介绍这方面的最新技术发展以及LETI/LIR(红外实验室)的1500元HgCdTe线列阵(工作波段为3μm-5μm和8μm-10μm)所达到的光电性能。这些甚长列阵(长度≈50mm)具有一种间接的混成结构,由对接的HgCdTe光伏探测电路和硅CMOS读出电路构成,后者与一块机械上紧密匹配的输出衬底混成在一起。关系到探测器间距的无缺陷切割和对接是利用精密的无损技术实现的。 High-resolution infrared imaging systems require very long scan arrays with thousands of detectors and high performance. This article presents the latest technological developments in this area as well as the photovoltaic performance achieved with the 1,500-yuan HgCdTe line array of LETI / LIR (infrared labs operating at 3μm-5μm and 8μm-10μm). These very long arrays (length ≈ 50 mm) have an indirect hybrid structure consisting of a docking HgCdTe PV detection circuit and a CMOS CMOS read-out circuit, which are mixed together with a mechanically close-matched output substrate. Flawless cutting and docking related to detector spacing is achieved using sophisticated non-destructive techniques.