64KMOS动态RAM的出现,标志着超大规模集成电路新纪元的到来。以大容量、高密度为目标的超大规模集成电路技术的进展,虽然使最小条宽为2微米的加工技术达到了实用化阶段,作出了64KRAM,但是加工尺寸的微细化将没有止境的继续进行下去。 在1959年至1960年期间,产生了扩散、外延、光刻、湿法工艺等各种技术结合在起的平面工艺。在此基础之上,1960年上半年开始了集成电路工艺。当时,最 The advent of 64KMOS dynamic RAM marks the arrival of a new era of very large scale integrated circuits. The progress of VLSI technology aimed at large capacity and high density has made 64KRAM for the processing technology with the minimum width of 2 micrometers, but the miniaturization of the processing size will not continue indefinitely Go down. Between 1959 and 1960, a combination of planar technologies such as diffusion, epitaxy, photolithography, and wet-process techniques was introduced. On this basis, IC technology began in the first half of 1960. At that time, most