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利用红外吸收光谱法,测量了氮化硅膜中的氢浓度。在钝化前后,对MOS结构界面性质及MOS器件特性进行了研究。结果表明:氮化硅膜中的氢浓度对MOS结构界面态影响较小,这主要是在淀积过程中,进入SiO_2层中的氢元素较少的缘故。钝化改善了CMOS器件的性能。
The hydrogen concentration in the silicon nitride film was measured by infrared absorption spectroscopy. Before and after passivation, the properties of the MOS interface and the characteristics of MOS devices were studied. The results show that the hydrogen concentration in the silicon nitride film has little effect on the interfacial state of the MOS structure, which is mainly due to the fewer hydrogen elements entering the SiO 2 layer during the deposition process. Passivation improves the performance of CMOS devices.