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为实现高品质因数Q值的光学环腔器件,采用耦合模理论,仿真得出单直波导光学环腔器件的Q值与自耦合系数的关系曲线。以Si3N4为材料,采用与CMOS工艺相兼容的技术制备了波导宽度为2μm,半径为200μm的Si3N4单直波导光学环腔器件。在相同的制备工艺下,同一芯片中不同光学环腔的传输系数相同,通过设计器件中环腔与直波导的间距取得不同的自耦合系数,实验得出器件Q值与自耦合系数的关系,其结果与仿真相一致,因此得出了器件工作在低传输损耗及弱耦合条件下可以取得高Q值的结论。
In order to realize the optical ring cavity device with high quality factor Q value, the relationship between the Q value and the self-coupling coefficient of the single-waveguide optical ring cavity device is simulated by the coupled-mode theory. Si3N4 single-waveguide optical ring cavity devices with Si3N4 as the material and compatible with CMOS technology were fabricated with a waveguide width of 2μm and a radius of 200μm. In the same preparation process, the same chip in different optical ring cavity transmission coefficient is the same, through the design of the device cavity and straight waveguide spacing to obtain different self-coupling coefficient, experimental results Q value of the device and self-coupling coefficient, the relationship The results are in good agreement with the simulations, and the conclusion is drawn that the device can achieve a high Q with low transmission loss and weak coupling.