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借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3mm×0.2mm,直径和长度分布均匀,平均直径约为41nm,平均长度为1.8μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线宏观阵列方法.
The AlN nanowires macroscopic arrays were successfully synthesized by the secondary template method and characterized. The main work is to investigate the fabrication of AlN nanowire macroscopic arrays with uniform orientation and uniform diameter by CVD method. By vapor deposition and self- Template prepared metal nanoparticles template; and then use the metal nanoparticles on the template as a catalyst, the use of chemical vapor deposition on the template synthesized AlN nanowires macroscopic array. SEM, TEM observation of the resulting sample, AlN nanowire array area of about 0.3mm × 0.2mm, uniform distribution of diameter and length, average diameter of about 41nm, the average length of about 1.8μm, the density distribution and the coverage of hexagonal AlN nanowire macroscopic arrays.Controllable prepared AlN nanowires macroscopic array method.