美国贝尔公司通讯研究室的科学家近来透露说有一种新的晶体生长方法。这种工艺在衬底上生长外延层时,衬底是悬浮的。这种气相悬浮外延(VLE)已生产特纯材料,主要用于光纤通讯系统。用这种方法生长InGaAs,可以促进快速光学器件的发展。这种新方法也能生长几个原子层的超薄层。新方法的设备由两个邻近的生长室组成。生长室上面有一个多孔的碟盖,室旁连接有水平悬浮 Recently, scientists at the Bell Labs Communications Laboratory in the United States have disclosed that there is a new method of crystal growth. In this process, the epitaxial layer is grown on the substrate, the substrate is suspended. This gas phase suspension epitaxy (VLE) has produced very pure materials, mainly for optical fiber communication systems. Growing InGaAs in this way can facilitate the development of fast optics. This new method can also grow several atomic layer of ultra-thin layer. The new method of equipment consists of two adjacent growth chambers. Above the growth chamber there is a perforated dish lid with a horizontal suspension attached to the chamber