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一、引言传统的半导体光刻工艺所用的光谱波长为350～450毫微米,因为几乎所有以前使用的光致抗蚀剂、光源和照明光学系统在波长低于350毫微米时都不能适应,因此不能用更短的波长。这样,传统波长范围内的衍射效应就成为影响图形最小尺寸、掩模片子间隙容许值和抗蚀剂图形厚-宽比(指抗蚀剂厚度与图形线条宽度之比)的限制因素。为适应微细加工的需要,已研究出诸如 X 射线光刻,电子束投影及电子束直接光刻等方法,但由于这些方法机构复杂,装置价格高及位置对准、掩模制造等问题,要作为实
I. INTRODUCTION The traditional semiconductor lithography process uses a spectral wavelength of 350-450 nm because almost all of the previously used photoresists, light sources, and illumination optics can not be accommodated at wavelengths below 350 nm Can not use shorter wavelengths. Thus, diffraction effects in the traditional wavelength range become limiting factors that affect the minimum size of the pattern, the allowable gap size of the mask sheet, and the resist thickness / width ratio (ratio of resist thickness to pattern line width). In order to meet the needs of microfabrication, methods such as X-ray lithography, electron beam projection and electron beam direct lithography have been developed. However, due to the complicated mechanism of these methods, the high price of the device and the alignment of the mask, As a real