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用真空蒸镀方法制备了［Ｆｅ／Ｃｒ］，［Ｆｅ／Ｃｒ／Ｓｉ］和［Ｆｅ／Ｓｉ］多层膜．研究了Ｃｒ层、Ｓｉ层和Ｃｒ＋Ｓｉ层厚度变化对层间耦合和磁电阻的影响．Ｆｅ层厚为２ｎｍ，Ｃｒ层厚度变化存在耦合振荡和巨磁电阻及其振荡．磁电阻值为１４６％（４２Ｋ）．在Ｃｒ层中加入一半Ｓｉ层或全部由Ｓｉ层替代，振荡消失，磁电阻减小到千分之几．根据掺Ｓｉ层后多层膜的电阻率变化，认为Ｓｉ加入使非磁层中自由电子数减少，随之极化效应也变弱，导致振荡消失，磁电阻大为降低
[Fe / Cr], [Fe / Cr / Si] and [Fe / Si] multilayers were prepared by vacuum deposition. The influence of the thickness variation of Cr layer, Si layer and Cr + Si layer on the interlayer coupling and magnetoresistance was studied. Fe layer thickness of 2nm, Cr layer thickness variation exists coupled oscillation and giant magnetoresistance and its oscillation. Magneto resistance value of 14 6% (4 2K). Adding half of the Si layer or all of the Si layer to the Cr layer disappears and the magnetic resistance is reduced to a few thousandths. According to the change of the resistivity of the multi-layer film after the Si-doped layer, it is considered that the addition of Si reduces the number of free electrons in the non-magnetic layer and the polarization effect becomes weaker, resulting in the disappearance of the oscillation and greatly reducing the magnetic resistance