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本文对ＰＥＣＶＤ法淀积原位掺杂多晶硅膜并制备浅发射结进行了实验研究，调查了Ｂ＿２Ｈ＿６／ＳｉＨ＿４比率以及淀积、退火温度等对掺杂多晶硅膜电阻率以及浅发射结形成的影响。结果表明，在３５０～４００℃的较低温度先淀积原位掺杂非晶膜，再１０００℃退火使其相变为掺杂多晶膜的工艺，不但能方便地获得所要求的发射区掺杂量和浅发射结结深，而且还能同时获得满足制备欧姆接触电极要求的低电阻多晶硅膜。
In this paper, PECVD deposition of in situ doped polycrystalline silicon film and preparation of shallow emission junctions were investigated. The effects of B_2H_6 / SiH_4 ratio, deposition and annealing temperature on the resistivity and shallow emitter junction formation were investigated. The results show that depositing in-situ doped amorphous film at a relatively low temperature of 350-400 ° C and annealing at 1000 ° C to transform into a doped polycrystalline film can not only conveniently obtain the desired emitting region Doping amount and shallow emitter junction depth, but also to meet the requirements of the preparation of ohmic contact electrode low-resistance polysilicon film.