论文部分内容阅读
应用坩埚下降法技术,以同成份化学摩尔分数[x(Li2O)=48.6%,x(Nb2O5)=51.4%]为原料,生长出了以不同Zn,Eu双掺杂的LiNbO3晶体。测定了晶体下部与上部的X射线衍射图(XRD)、激发光谱、荧光光谱以及声子边带谱。Zn的掺杂量对Eu3+离子在晶体中的分布产生很大的影响。Zn掺杂摩尔分数为3%时,Eu3+离子在进入晶格时受到有效的压制。随着Zn掺杂摩尔分数提高,达到6%时,压制作用减弱。从Zn2+离子在LiNbO3中随浓度变化的分凝情况以及对Eu3+离子的排斥作用解释了Eu3+离子分布的原因。同时测定了Zn掺杂样品的声子边带谱。
The LiNbO3 crystals doped with different Zn and Eu were grown by using the crucible dropping method with the same molar fraction of chemical components [x (Li2O) = 48.6% and x (Nb2O5) = 51.4%] as raw materials. The X-ray diffraction patterns (XRD), excitation spectra, fluorescence spectra and phonon sideband spectra of the lower part and the upper part of the crystal were measured. The doping amount of Zn has a great influence on the distribution of Eu3 + ions in the crystal. When the Zn doping mole fraction is 3%, Eu3 + ions are effectively suppressed when they enter the crystal lattice. As the mole fraction of Zn doping increases, the compression becomes weaker at 6%. The reason for the Eu3 + ion distribution is explained from the fact that the concentration of Zn2 + ion in LiNbO3 changes and the exclusion of Eu3 + ions. The phonon sideband spectra of Zn-doped samples were also measured.