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现代的微电子器件,在重掺杂的硅材料上的自对准结构中采用过渡金属。在硅化物生成期间或生成之后的热处理可能使作基础的硅层中的杂质浓度发生很大的变化。本文讨论了自对准硅化物结构中的各种扩散机理及其对器件性能的影响。
Modern microelectronic devices use transition metals in self-aligned structures on highly doped silicon materials. The heat treatment during or after the silicide formation may greatly change the impurity concentration in the underlying silicon layer. This article discusses the various diffusion mechanisms in self-aligned silicide structures and their impact on device performance.