论文部分内容阅读
一、引言 超晶格材料是用现代薄膜生长技术制成的一种新型材料。自从1970年美国首次在GaAs半导体上制成了超晶格结构后,又研制出GaAs和各种Ⅲ-Ⅴ族化合物超晶格材料,而后Ⅳ-Ⅳ族、Ⅱ-Ⅵ族,以及非晶态半导体超晶格等也相继出现,有一些已经获得实用,制成了重要的微电子和光电子器件。 一般分析一维超晶格的结构或外延薄膜的常用方法是双晶衍射方法以及X射线低角度衍射法。在此我们用常规的X射线衍射仪法,对In_xGa_(1-x)As/GaAs超晶格进行实验分析,得到了存在超晶格结构信息的衍射谱线,并用运动学衍射理论进行了超晶格结构分析,获得了较满意的结果,与双晶衍射方法的结果基本符合。最后讨论了X射线衍射仪法的特点与不足,以供参考。
I. INTRODUCTION Superlattice materials are a new type of material made with modern thin film growth technology. Since the United States made its first superlattice structure on GaAs semiconductors in 1970, GaAs and various III-V superlattice materials have been developed. Then, the IV-IV, II-VI, and amorphous Semiconductor superlattices and so on have also appeared one after another, and some have been made practical and made into important microelectronics and optoelectronic devices. Commonly used methods for the general analysis of structures or epitaxial films of one-dimensional superlattices are the twin crystal diffraction method and the X-ray low angle diffraction method. Here, we use the conventional X-ray diffraction method to experimentally analyze the In_xGa_ (1-x) As / GaAs superlattices and obtain the diffraction lines with superlattice structure information. The kinetics of diffraction Lattice structure analysis, obtained more satisfactory results, consistent with the results of the twin crystal diffraction method. Finally, the characteristics and disadvantages of X-ray diffraction method are discussed for reference.