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研究了在光学元件上的氧离子辅助淀积SiO_2和TiO_2膜层与离子能量(30-500电子伏特)和离子流密度(0-300微安/厘米~2)的关系。证实了低能和高能离子轰击场能改善SiO_2膜的化学配比,而在低能情况其改善略为大些。对于TiO_2膜,低能轰击能改善化学配比,而高能轰击反而导致明显不利。在高能离子辅助淀积的SiO_2薄膜中氢含量减少到1/10。在低温基片上(50-100℃)制备了牢固的膜层。讨论了膜层的内应力特性。
The relationship between ion energy (30-500 electron volts) and ion current density (0-300 μA / cm ~ 2) was investigated by means of oxygen ion-assisted deposition of SiO_2 and TiO_2 on the optics. It is confirmed that the bombardment field of low energy and high energy ion can improve the stoichiometry of SiO2 film, while the improvement is slightly larger in the case of low energy. For the TiO 2 film, low energy bombardment can improve the chemical ratio, but high energy bombardment on the contrary lead to significant negative. The hydrogen content is reduced to 1/10 in the high-energy ion-assisted deposition of SiO 2 film. A strong film was prepared on a cryogenic substrate (50-100 ° C). The internal stress characteristics of the film are discussed.