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利用阳极氧化铝模板(AAO)进行Ni的电化学沉积,通过在溶液中引入螯合剂控制电解质的有效浓度和电沉积的过电位,实现了Ni纳米线和纳米管阵列的可控制备.通过分析电沉积过程中纳米线和纳米管在不同位置生长速率(侧壁(Vw)和底端(Vb))的控制因素,我们提出了纳米线和纳米管生长的可能机制.当电解质浓度高而还原电位更负(如-1.5V)时,或者当电解质浓度低而还原电位较负(如-0.5V)时,Vw>Vb,可以获得Ni纳米管阵列;当电解质浓度高而还原电位较负(如-0.5V)时,或者当电解质浓度低而还原电位更负(如-1.5V)时,Vw≈Vb,可以获得Ni纳米线阵列.这种生长机制适用于多种金属纳米管或者纳米线阵列的可控制备.
The electrochemical deposition of Ni by anodic alumina template (AAO) was used to control the preparation of Ni nanowires and nanotube arrays by introducing a chelating agent into the solution to control the effective concentration of electrolytes and the overpotential of electrodeposition. We proposed the possible mechanism of the growth of nanowires and nanotubes by controlling the growth rate (Vw and Vb) of nanowires and nanotubes at different positions during the electrodeposition process.When the electrolyte concentration is high and the reduction The Ni nanotube array can be obtained when the potential is more negative (eg -1.5V), or when the electrolyte concentration is low and the reduction potential is negative (eg -0.5V), Vw> Vb; when the electrolyte concentration is high and the reduction potential is negative Such as -0.5 V) or Vw ≈ Vb when the electrolyte concentration is low and the reduction potential is more negative (eg -1.5 V), this growth mechanism is suitable for use in a variety of metal nanotubes or nanowires Array of controllable preparation.