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本文通过自洽地求解薛定鄂方程及泊松方程计算了在温度T=0,有效质量近似下,Si均匀掺杂的GaAs/AlGaAs量子阱系统的电子态结构.研究了掺杂浓度及掺杂层厚度对子带能量,本征包络函数,自洽势,电子密度分布,及费米能量的影响.发现在给定掺杂浓度下,子带能量随掺杂层厚度的增加单调递减,自洽势的势阱变宽变浅,电子密度分布变宽,峰值变低;在给定掺杂层厚度下,随掺杂浓度的增加子带能量及费米能级单调递增,自洽势阱变深变陡变窄,电子密度分布的峰值变高,集中在中心.
In this paper, the electronic structure of GaAs / AlGaAs quantum well system doped uniformly with Si at temperature T = 0 and effective mass approximation was calculated by solving Schrödinger equation and Poisson equation. The effects of doping concentration and doped layer The influence of thickness on the energy of subbands, intrinsic envelope function, self-consistent potential, electron density distribution and Fermi energy was studied. It was found that at a given doping concentration, the energy of the subband decreases monotonously with the increase of the doping layer thickness, The potential well of the contact potential broadened and became shallow, the electron density distribution broadened and the peak value became lower. At a given doping layer thickness, with the doping concentration increasing, the energy of the subband and the Fermi level monotonically increased. As the depth becomes steeper and narrow, the peak of the electron density distribution becomes higher, concentrating in the center.