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基于纳米多晶硅薄膜电阻的多功能传感器由压力传感器和加速度传感器构成。纳米多晶硅薄膜电阻构成的两个惠斯通电桥结构分别设计在方形硅膜表面和悬臂梁根部。采用MEMS技术和CMOS工艺在〈100〉晶向单晶硅片上实现压力/加速度传感器芯片制作,利用内引线技术将芯片封装在一个印刷电路板(PCB)上。在室温下,工作电压为5.0V时,实验结果给出压力传感器灵敏度(a=0)为1.0mV/kPa,加速度传感器灵敏度(p=0)为0.92mV/g,可实现外加压力和加速度的测量,具有较好的灵敏度特性且交叉干扰较弱。
The multi-function sensor based on the nano-poly film resistance consists of a pressure sensor and an acceleration sensor. Two Wheatstone bridge structures consisting of nano-polysilicon film resistors are designed on the square silicon film surface and the cantilever root, respectively. MEMS technology and CMOS technology in <100> crystalline silicon wafer to achieve pressure / acceleration sensor chip production, the use of lead-chip technology will be packaged in a printed circuit board (PCB). The experimental results show that the sensitivity of the pressure sensor (a = 0) is 1.0mV / kPa and the sensitivity of the acceleration sensor (p = 0) is 0.92mV / g at room temperature with an operating voltage of 5.0V. Measurement, with good sensitivity characteristics and cross-interference is weak.