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We perform a theoretical study of the effects of the lightly doped drain(LDD) and high-k dielectric on the performances of double gate p–i–n tunneling graphene nanoribbon field effect transistors(TFETs). The models are based on non-equilibrium Green’s functions(NEGF) solved self-consistently with 3D-Poisson’s equations. For the first time, hetero gate dielectric and single LDD TFETs(SL-HTFETs) are proposed and investigated. Simulation results show SL-HTFETs can effectively decrease leakage current, sub-threshold swing, and increase on–off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p C 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition,comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and thus could be promising devices for logic and ultra-low power applications.
We perform a theoretical study of the effects of the lightly doped drain (LDD) and high-k dielectric on the performances of double gate p-i-n tunneling graphene nanoribbon field effect transistors (TFETs). The models are based on non-equilibrium For the first time, hetero gate dielectric and single LDD TFETs (SL-HTFETs) are proposed and investigated. Simulation results show SL-HTFETs can sure decrease leakage current, sub -threshold swing, and increase on-off current ratio compared to conventional TFETs and Si-based devices; the SL-HTFETs from the 3p C 1 family have better switching characteristics than those from the 3p family due to smaller effective masses of the former. In addition, comparison of scaled performances between SL-HTFETs and conventional TFETs show that SL-HTFETs have better scaling properties than the conventional TFETs, and therefore be able promising devices for logic and ultra-low pow er applications.