目的:探讨阅读障碍儿童认知事件相关电位的特点,以了解阅读障碍认知缺陷的脑机制。方法:利用事件相关电位技术,采用听觉主动Oddball范式,比较阅读障碍(RD)儿童与正常儿童在不同注意状态下的听觉事件相关电位特点。结果:在注意不计数条件下,RD组儿童N2、P3潜伏期长于非RD组儿童,P3波幅低于非RD组儿童;在注意计数条件下,RD组儿童记数失误率远大于非RD组儿童,其P3潜伏期显著长、P3波幅显著低于非RD组儿童,差异均有统计学显著意义(P<0.01)。结论:阅读障碍儿童存在注意及记忆缺陷。 Objective: To investigate the characteristics of cognitive potentials in children with Dyslexia to understand the brain mechanism of cognitive deficits in Dyslexia. Methods: Using the event-related potential technique, we used auditory active Oddball paradigm to compare the characteristics of auditory event-related potentials under different states of attention in children with RD. Results: Under the condition of not counting, the latency of N2 and P3 in RD group was longer than that of non-RD group, and the amplitude of P3 was lower than that of non-RD group , P3 significantly longer latency, P3 amplitude was significantly lower than non-RD children, the differences were statistically significant (P <0.01). Conclusion: Children with Dyslexia have attention and memory deficits.