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成功地设计了与TTL相容的用于数字大规模集成的高性能的第二代I~2L/MTL门,在宽的电流范围和从-55～+125℃的军用温度范围内,完全显示和证明了功能特性。就一个注入极在侧面、5个集电极—直线排列的门测量了其性能。在100μA注入电流下,门性能为:25℃时全部集电极β_u~(eff)≥4,-55℃时β_u~(eff)≥2.5,-55～+125℃时α_(rcc)/α_F≈0.58,(?)_d=18～20ns,25℃时速度—功耗乘积1.4PJ,在小注入电流时,获得恒定的0.36PJ的速度—功耗乘积。
Successfully designed TTL-compatible, high-performance, second-generation I ~ 2L / MTL gates for digital large-scale integration, fully displayed over a wide current range and military temperature range from -55 to + 125 ° C And proved the function characteristic. On the side of an injection pole, five collectors - linearly aligned doors measure their performance. Under 100μA injection current, the gate performance is: β_u ~ (eff) ≥4 at 25 ℃, β_u ~ (eff) ≥2.5 at -55 ℃, α_ (rcc) / α_F≈ at -55 ~ + 125 ℃ 0.58, (?) _d = 18 ~ 20ns, the speed-power product is 1.4PJ at 25 ° C and a constant 0.36PJ speed-power product is obtained at a small injection current.