美国加州大学圣地亚哥分校的研究人员基于纳米结构开发出一款不依赖半导体传导的光控微电子器件,其在低电压和低功率激光激发条件下的电导率比现有半导体器件提高近10倍。据介绍,传统的半导体器件受材料本身的限制,在频率、功耗等方面存在极限,而利用自由电子替代半导体材料通常需要通过高电压、大功率激光或高温进行激发。研究人员在硅片上用金加工出一种类似于蘑菇形状的纳米结构,在 Researchers at the University of California, San Diego, USA, based on nanostructures, have developed a light-control microelectronic device that does not rely on semiconductor conduction. Its conductivity under low-voltage and low-power laser excitation is nearly 10 times higher than existing semiconductor devices. According to reports, the traditional semiconductor devices by the material itself, there are limits in terms of frequency, power consumption, etc., and the use of free electrons to replace semiconductor materials usually need to be excited by high-voltage, high-power laser or high temperature. Researchers on the silicon with gold processed into a similar shape of mushroom nanostructures, at