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采用电荷分配法的半导体硅的位置灵敏探测器,因为既能同时提供能量和位置的信息,又具有使用简便,分辨能力好的优点,因而得到广泛应用。根据核物理实验研究工作的进展需要,我们研制了大灵敏面积的深耗尽层的硅半导体位置灵敏探测器。 电荷分配电阻可以用离子注入技术、蒸发金属膜和半导体材料构成。根据需要,我们制备了不同耗尽层厚度的探测器。浅耗尽深度的探测器采用n型硅材料和离子注入技术制备,深耗尽层的用p型硅材料和锂离子漂移技术制备。
The location sensitive detector of semiconductor silicon using charge distribution method has been widely used because it can not only provide the information of energy and location at the same time, but also has the advantages of easy to use and good resolving power. According to the needs of the progress of nuclear physics experiment research, we have developed a deep-depleted silicon semiconductor position sensitive detector with a large sensitive area. Charge distribution resistors can be formed using ion implantation techniques, evaporating metal films, and semiconductor materials. We prepared detectors for different depletion layer thicknesses as needed. Shallow depth detectors are fabricated using n-type silicon and ion implantation techniques, deep depletion layers fabricated using p-type silicon and lithium-ion drift techniques.