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荷电膜的传质研究不仅对以电膜为基础的分离研究具有重要借鉴作用,而且对以非分离为基础的材料的导电-绝缘特性的转换判定和相关材料的制备具有重要的指导意义。为此,本文在一价离子通过荷电膜传质问题的研究基础上,用渗透理论的有关原理和方法,研究了二价、三价离子通过荷电膜的渗透传质问题,采用计算机模拟,计算得出二价、三价离子形态的渗透临界值：在二维50×50中,二价和三价离子的渗透临界值分别为0．435和0．516；在三维30×30×30中,二价、三价离子的渗透临界值分别为0．159和0．199。这说明无论是二维还是三维,随着离子价态的升高,渗透临界值增加。模拟的阶数虽与实际膜相差甚远,但模拟结果中阶数增大突跃的趋势已经十分明显,因此研究结果可用于预测多价离子在荷电膜中的传导机理。
The mass transfer of charged films not only plays an important role in the study of electrofilm-based separation, but also plays an important guiding role in the determination of the transition of conductivity-insulation properties and the preparation of related materials on the basis of non-separation. Therefore, based on the research on mass transfer of monovalent ions through the charged membrane, the permeation and mass transfer of divalent and trivalent ions through the charged membrane was studied by using the principles and methods of osmosis theory. By computer simulation , The calculated critical values for the bivalent and trivalent ionic forms are as follows: the critical values for the divalent and trivalent ions in the two-dimensional 50 × 50 are 0.435 and 0.516, respectively; in the three-dimensional 30 × 30 × 30, the critical values of divalent and trivalent ions are 0.159 and 0.199, respectively. This shows that both the two-dimensional and three-dimensional, with the valence of ions increased, the critical value of penetration increased. Although the order of simulation is far from the actual film, the tendency of the order of the number to increase the jump in the simulation results has been very obvious. Therefore, the research results can be used to predict the conduction mechanism of multivalent ions in charged films.