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通过采用经过优化的新型大光腔结构 ,脊形波导 980 nm单模 In Ga As/Ga As/Al Ga As多量子阱半导体激光器在保持大功率光输出的同时获得了较小的垂直发散角 .结果表明波导中的光功率密度可以降低 ,获得了大于40 0 m W、斜率效率 0 .89W/A的输出光功率 ,垂直方向远场发散角也降低到 2 3°
The ridge waveguide 980 nm single-mode In Ga As / Ga As / Al Ga As multiple quantum well semiconductor laser achieves a smaller vertical divergence angle while maintaining high-power light output by adopting a new, large cavity structure optimized. The results show that the optical power density in the waveguide can be reduced, the output optical power greater than 40 0 mW and the slope efficiency of 0.89 W / A is obtained, and the vertical far-field divergence angle is also reduced to 23 °