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采用一种新方法对InGaAs/InP复合沟道高电子迁移率晶体管进行了模拟.该方法通过流体力学模型和密度梯度模型的联合求解,得到了沟道内的电子密度分布.与一些传统方法相比,该方法收敛性更好,速度更快,且同样适用于其他类型高电子迁移率晶体管器件的模拟.利用仿真对InGaAs/InP复合沟道高电子迁移率晶体管进行了深入研究.
A new method was used to simulate the InGaAs / InP composite channel high electron mobility transistor, which obtained the electron density distribution in the channel by the combination of hydrodynamic model and density gradient model. Compared with some traditional methods , The proposed method is more convergent and faster, and is also suitable for the simulation of other types of high electron mobility transistor devices. InGaAs / InP composite channel HEMTs are studied by simulation.