一、引言电子束扫描摄象管的历史在前一章中已经提到了。虽然这些器件采用固态半导体靶,但还不能把它们当作固体摄象传感器。这一名称专门留给自扫描器件,即用加于光敏材料本身的电脉冲来读出存贮的光生电子。在这一章,我们将讨论主要用于可见光的摄象传感器。今天,这些传感器采用MOS集成电路行业的制造工艺,以单晶硅进行专门的制作。实际上,该工艺的早期发展促进了这些器件的发明,而将这些器件用作有1/4mil图象单元的电视摄象器则是该工艺的最新发展。因此,本章的一个题目是关于制造只需一瓦功率、袖珍计算 I. INTRODUCTION The history of electron beam scanning cameras has already been mentioned in the previous chapter. Although these devices use solid-state semiconductor targets, they can not be regarded as solid-state image sensors. This name is reserved exclusively for self-scanning devices where the stored photogenerated electrons are read out by an electrical pulse applied to the photosensitive material itself. In this chapter, we will discuss the camera sensor that is mainly used for visible light. Today, these sensors use the manufacturing process of the MOS integrated circuit industry to produce silicon specifically. In fact, the early development of the process led to the invention of these devices, and the use of these devices as television cameras with 1 / 4mil of picture elements is the latest development of the process. So one of the topics in this chapter is about making pocket calculations on just one watt of power