论文部分内容阅读
本文推荐一种使用光刻形成图形的无机光致抗蚀剂作为扩散源的新掺杂技术。所用的这种抗蚀剂膜是由Se-Ge为基体用施主或受主杂质作为第三组分所组成三元系统;文章详细地介绍了扩散工艺步骤;用这种技术成功地完成了在硅中进行n型和p型杂质的掺杂。所制成的n~+-p型和p~+-n型二极管具有良好的p-n结特性,而且丝毫不低于常规方法制造的二极管特性。采用这种技术还制作了双扩散n -p-n晶体管。用二次离子质谱仪(SIMS)分析结果表明:掺入硅中的硒和锗量极微,基本上可以忽略不计,这种新型掺杂技术不需形成二氧化硅掩模,也无需形成这种掩模图形。我们可以预料这种掺杂技术将在工艺简化方面和一些其它方面显示出许多优点。
This paper proposes a new doping technique using photolithographically patterned inorganic photoresists as a diffusion source. The resist film used is a ternary system consisting of a donor or acceptor impurity of Se-Ge as a matrix and a third component; the article details the diffusion process steps; the successful completion of the Doped n-type and p-type impurities in silicon. The resulting n ~ + -p and p ~ + -n diodes have good p-n junction characteristics and are at no less than the diode characteristics of conventional processes. Using this technique, a dual diffused n-p-n transistor has also been fabricated. Analysis by SIMS shows that the amount of selenium and germanium incorporated into silicon is negligibly negligible. This new doping technique does not require the formation of a silicon dioxide mask and does not require the formation of Mask graphics. We can expect this doping technique to show many advantages in terms of process simplification and some other aspects.