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报道了一种具有高速响应特性的GaAs基长波长谐振强增强型(RCE)光探测器,它采用分子束外延技术(MBE)在GaAs衬底上直接生长GaAs/AlAs布拉格反射镜(DBR)和GaInNAs/GaAs多量子阱吸收层而形成,解决了GaAs系材料只能对短波长光响应的问题,实现了GaAs基探测器对长波长光的响应。该器件在峰值响应波长1296.5nm处获得了17.4%的量子效率,响应谱线半宽为11nm,零偏置时的暗电流密度8.74×10-15A/μm2,具有良好的暗电流特性。通过RC常数测量计算得到器件的3dB带宽为4.82GHz。
A GaAs long wavelength resonance enhancement (RCE) photodetector with high-speed response is reported. The GaAs / AlAs Bragg reflector (DBR) is directly grown on GaAs substrate by molecular beam epitaxy (MBE) GaInNAs / GaAs multiple quantum well absorber to solve the problem that GaAs materials can only respond to short-wavelength light and realize the response of GaAs-based detectors to long wavelength light. The device achieves quantum efficiency of 17.4% at a peak response wavelength of 1296.5 nm with a full-width half-width response spectrum of 11 nm and a dark current density of 8.74 × 10 -15 A / μm 2 at zero bias with good dark current characteristics. The 3dB bandwidth of the device is calculated by RC constant measurement to be 4.82GHz.