硅面垒探测器是半导体核辐射探测器中发展较早的一种器件,大多数情况下,采用N-型硅单晶,有些实验室也使用P-型硅单晶制备面垒探测器。因为硅的禁带宽为1.1eV,所以硅探测器的工作温度范围比锗探测器宽,它能在常温下工作,但是在40℃以上工作时,器件的漏电流和噪声随偏压升高而增大,经过70℃以上高温试验,器件往往变坏。美国加州大学劳伦 Silicon surface barrier detector is a semiconductor nuclear radiation detector in the development of an earlier device, in most cases, the use of N-type silicon single crystal, some laboratories also use P-type silicon single crystal surface preparation detector. Because silicon has a forbidden bandwidth of 1.1 eV, the silicon detector operates over a wider temperature range than a germanium detector and operates at room temperature. However, the leakage current and noise of the device increase with bias voltage while operating above 40 ° C Increase, after high temperature above 70 ℃ test, the device tends to deteriorate. Lauren of the University of California