论文部分内容阅读
The influences of stress on the properties of In GaN/GaN multiple quantum wells(MQWs) grown on silicon substrate were investigated.The different stresses were induced by growing In GaN and Al GaN insertion layers(IL) respectively before the growth of MQWs in metal–organic chemical vapor deposition(MOCVD) system.High resolution x-ray diffraction(HRXRD) and photoluminescence(PL) measurements demonstrated that the In GaN IL introduced an additional tensile stress in n-GaN,which released the strain in MQWs.It is helpful to increase the indium incorporation in MQWs.In comparison with MQWs without the IL,the wavelength shows a red-shift.Al GaN IL introduced a compressive stress to compensate the tensile stress,which reduces the indium composition in MQWs.PL measurement shows a blue-shift of wavelength.The two kinds of ILs were adopted to In GaN/GaN MQWs LED structures.The same wavelength shifts were also observed in the electroluminescence(EL) measurements of the LEDs.Improved indium homogeneity with In GaN IL,and phase separation with Al GaN IL were observed in the light images of the LEDs.
The influences of stress on the properties of In GaN / GaN multiple quantum wells (MQWs) grown on silicon substrates were investigated. The different stresses were induced by growing In GaN and Al GaN insertion layers (IL) before the growth of MQWs in metal -organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements that the In GaN IL introduced an additional tensile stress in n-GaN, which released the strain in MQWs.It is helpful to increase the indium incorporation in MQWs.In comparison with MQWs without the IL, the wavelength shows a red-shift. Al GaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs.PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to In GaN / GaN MQWs LED structures. same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Imprinted indium homog eneity with In GaN IL, and phase separation with Al GaN IL were observed in the light images of the LEDs.