GaN是一种宽禁带半导体材料,非常适合于制作从蓝光到近紫外波段的光电器件,它也是Ⅱ-V族含氮化合物中研究得最充分的材料,近年来在国际上受到很大重视.在材料制备方面初步解决了p型掺杂的困难,从而制成了高功率的发光二极管. 目前生长GaN比较成功的方法是使用有机气体氮源的金 GaN is a wide bandgap semiconductor material that is well suited for the fabrication of optoelectronic devices from the blue to the near ultraviolet region. It is also the most well studied group II-V nitrogen-containing compound and has received considerable international attention in recent years .Prepared in the material preparation of p-type doping difficulties, resulting in high-power light-emitting diodes.Now growth of GaN is more successful method is the use of organic gas nitrogen source of gold