论文部分内容阅读
在分析半绝缘(SI)砷化镓光导开关(PCSS)中丝状电流(流注)形成和传播的实验结果的基础上,提出了高增益砷化镓光导开关中的畴电子崩(EAD)理论.该理论完善了EAD概念,揭示了高增益GaAsPCSS中局域内的强电场作用和高载流子密度效应使非平衡载流子密度稳定增长,从而导致流注形成.应用EAD理论合理地解释了GaAsPCSS中电流丝的形成和传播,解释了在器件两端的偏置电场低于载流子本征碰撞电离的电场阈值条件下器件中存在载流子雪崩生长等实验现象,结果表明在这类具有转移电子效应的半导体器件中,EAD理论是分析流注形成的基本理论.
Based on the experimental results of filament current (flow injection) formation and propagation in semi-insulating (SI) gallium arsenide photoconductive switches (PCSS), the domain electron collapse (EAD) Theory. This theory improves the concept of EAD, and reveals that strong local electric field and high carrier density effect in high-gain GaAsPCSS make the density of non-equilibrium carriers increase steadily, which leads to the formation of fluid injection. The formation and propagation of current filaments in GaAsPCSS explained the experimental phenomena of carrier avalanche growth in the device under the condition of the electric field threshold that the bias electric field at both ends of the device is lower than the intrinsic ion impact ionization. The results show that in this kind of EAD theory is the basic theory for analyzing the formation of streamers in semiconductor devices with electron transfer effects.