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利用 GaAs 新的速场关系考察了速度过冲对短沟道 GaAs MESFET 性能的影响。发展了短沟道 GaAs MESFET 的稳态偶极畴模型。对新模型的分析表明,速度过冲对短沟道 GaAsMESFET 的性能有重要改善。按稳态偶极畴模型工作的器件,极限频率主要由跨导截止频率 f_τ决定,抑制畴的形成可以得到高的极限频率。
The effect of speed overshoot on the performance of short-channel GaAs MESFETs was investigated by using the new fast-field relationship of GaAs. The steady-state dipolar domain model of short-channel GaAs MESFET has been developed. Analysis of the new model shows that speed overshoot has an important improvement on the performance of the short-channel GaAsMESFETs. Devices operating in a steady-state dipole-domain model, the ultimate frequency is mainly determined by the transconductance cutoff frequency f_τ, suppressing the formation of the domain gives a high limit frequency.